Positron trapping in indium
Identifieur interne : 000933 ( Main/Exploration ); précédent : 000932; suivant : 000934Positron trapping in indium
Auteurs : RBID : ISTEX:339_1977_Article_BF00890720.pdfEnglish descriptors
Abstract
The positron annihilation lineshape was measured in indium in the temperature range between 74 K and the melting point (430 K). A model based on self-trapping of positrons and trapping by vacancies was fitted through the data. A vacancy formation enthalpy of (0.48±0.03) eV was obtained.
DOI: 10.1007/BF00890720
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Dorikens</name><affiliation wicri:level="1"><mods:affiliation>Laboratorium voor Kernfysica, Rijksuniversiteit Gent, I.N.W., Proeftuinstraat 86, B-9000, Gent, Belgium</mods:affiliation><country xml:lang="fr">Belgique</country><wicri:regionArea>Laboratorium voor Kernfysica, Rijksuniversiteit Gent, I.N.W., Proeftuinstraat 86, B-9000, Gent</wicri:regionArea><wicri:noRegion>Gent</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1977_Article_BF00890720.pdf</idno><date when="1977">1977</date><idno type="doi">10.1007/BF00890720</idno><idno type="wicri:Area/Main/Corpus">000147</idno><idno type="wicri:Area/Main/Curation">000147</idno><idno type="wicri:Area/Main/Exploration">000933</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>61.70</term><term>78.70</term><term>81</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The positron annihilation lineshape was measured in indium in the temperature range between 74 K and the melting point (430 K). A model based on self-trapping of positrons and trapping by vacancies was fitted through the data. A vacancy formation enthalpy of (0.48±0.03) eV was obtained.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="19cb175d599b1edc1439476ce018f4c9153cbae3"><titleInfo lang="eng"><title>Positron trapping in indium</title></titleInfo><name type="personal"><namePart type="given">D.</namePart><namePart type="family">Segers</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratorium voor Kernfysica, Rijksuniversiteit Gent, I.N.W., Proeftuinstraat 86, B-9000, Gent, Belgium</affiliation></name><name type="personal"><namePart type="given">L.</namePart><namePart type="family">Dorikens-Vanpraet</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratorium voor Kernfysica, Rijksuniversiteit Gent, I.N.W., Proeftuinstraat 86, B-9000, Gent, Belgium</affiliation></name><name type="personal"><namePart type="given">M.</namePart><namePart type="family">Dorikens</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Laboratorium voor Kernfysica, Rijksuniversiteit Gent, I.N.W., Proeftuinstraat 86, B-9000, Gent, Belgium</affiliation></name><typeOfResource>text</typeOfResource><genre>Contributed Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1976-11-08</dateCreated><dateCaptured encoding="w3cdtf">1976-12-01</dateCaptured><dateValid encoding="w3cdtf">2004-12-13</dateValid><copyrightDate encoding="w3cdtf">1977</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The positron annihilation lineshape was measured in indium in the temperature range between 74 K and the melting point (430 K). A model based on self-trapping of positrons and trapping by vacancies was fitted through the data. A vacancy formation enthalpy of (0.48±0.03) eV was obtained.</abstract><subject lang="eng"><genre>PACS Codes</genre><topic>78.70</topic><topic>61.70</topic><topic>81</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys.</title></titleInfo><titleInfo><title>Applied physics</title><partNumber>Year: 1977</partNumber><partNumber>Volume: 13</partNumber><partNumber>Number: 1</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1977-05-01</dateIssued><copyrightDate encoding="w3cdtf">1977</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0340-3793</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 24</identifier><recordInfo><recordOrigin>Springer-Verlag, 1977</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00890720</identifier><identifier type="matrixNumber">Art10</identifier><identifier type="local">BF00890720</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>51</start><end>54</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1977</recordOrigin><recordIdentifier>339_1977_Article_BF00890720.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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